Publication Information

{'id': 'https://openalex.org/W1593023019', 'doi': None, 'title': 'Using of the Modern Semiconductor Devices Based on the SiC', 'display_name': 'Using of the Modern Semiconductor Devices Based on the SiC', 'publication_year': 2008, 'publication_date': '2008-01-01', 'ids': {'openalex': 'https://openalex.org/W1593023019', 'mag': '1593023019'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doaj.org/article/1cd1634e5ba34b3787f00e15f3f63881', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S4306401280', 'display_name': 'DOAJ (DOAJ: Directory of Open Access Journals)', 'issn_l': None, 'issn': None, 'is_oa': True, 'is_in_doaj': False, 'is_core': False, 'host_organization': None, 'host_organization_name': None, 'host_organization_lineage': [], 'host_organization_lineage_names': [], 'type': 'repository'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'journal-article', 'indexed_in': ['doaj'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5031657614', 'display_name': 'Pavel Drabek', 'orcid': 'https://orcid.org/0000-0001-8921-1127'}, 'institutions': [{'id': 'https://openalex.org/I92715842', 'display_name': 'University of West Bohemia', 'ror': 'https://ror.org/040t43x18', 'country_code': 'CZ', 'type': 'education', 'lineage': ['https://openalex.org/I92715842']}], 'countries': ['CZ'], 'is_corresponding': True, 'raw_author_name': 'Pavel Drabek', 'raw_affiliation_strings': ['#N#University of West Bohemia#N#'], 'affiliations': [{'raw_affiliation_string': '#N#University of West Bohemia#N#', 'institution_ids': ['https://openalex.org/I92715842']}]}], 'institution_assertions': [], 'countries_distinct_count': 1, 'institutions_distinct_count': 1, 'corresponding_author_ids': ['https://openalex.org/A5031657614'], 'corresponding_institution_ids': ['https://openalex.org/I92715842'], 'apc_list': None, 'apc_paid': None, 'fwci': 0.479, 'has_fulltext': False, 'cited_by_count': 1, 'citation_normalized_percentile': {'value': 0.529086, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 63, 'max': 70}, 'biblio': {'volume': None, 'issue': None, 'first_page': None, 'last_page': None}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': None, 'topics': [], 'keywords': [{'id': 'https://openalex.org/keywords/insulated-gate-bipolar-transistor', 'display_name': 'Insulated-gate bipolar transistor', 'score': 0.8528637}, {'id': 'https://openalex.org/keywords/power-electronics', 'display_name': 'Power Electronics', 'score': 0.5806521}], 'concepts': [{'id': 'https://openalex.org/C2780722187', 'wikidata': 'https://www.wikidata.org/wiki/Q412356', 'display_name': 'Silicon carbide', 'level': 2, 'score': 0.8703049}, {'id': 'https://openalex.org/C28285623', 'wikidata': 'https://www.wikidata.org/wiki/Q176110', 'display_name': 'Insulated-gate bipolar transistor', 'level': 3, 'score': 0.8528637}, {'id': 'https://openalex.org/C129014197', 'wikidata': 'https://www.wikidata.org/wiki/Q906544', 'display_name': 'Power semiconductor device', 'level': 3, 'score': 0.7298621}, {'id': 'https://openalex.org/C108225325', 'wikidata': 'https://www.wikidata.org/wiki/Q11456', 'display_name': 'Semiconductor', 'level': 2, 'score': 0.6398921}, {'id': 'https://openalex.org/C79635011', 'wikidata': 'https://www.wikidata.org/wiki/Q175805', 'display_name': 'Semiconductor device', 'level': 3, 'score': 0.61141664}, {'id': 'https://openalex.org/C2778413303', 'wikidata': 'https://www.wikidata.org/wiki/Q210793', 'display_name': 'MOSFET', 'level': 4, 'score': 0.5894819}, {'id': 'https://openalex.org/C178911571', 'wikidata': 'https://www.wikidata.org/wiki/Q593143', 'display_name': 'Power electronics', 'level': 3, 'score': 0.5806521}, {'id': 'https://openalex.org/C172385210', 'wikidata': 'https://www.wikidata.org/wiki/Q5339', 'display_name': 'Transistor', 'level': 3, 'score': 0.5715583}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.56809574}, {'id': 'https://openalex.org/C138331895', 'wikidata': 'https://www.wikidata.org/wiki/Q11650', 'display_name': 'Electronics', 'level': 2, 'score': 0.5280617}, {'id': 'https://openalex.org/C119599485', 'wikidata': 'https://www.wikidata.org/wiki/Q43035', 'display_name': 'Electrical engineering', 'level': 1, 'score': 0.49854374}, {'id': 'https://openalex.org/C61696701', 'wikidata': 'https://www.wikidata.org/wiki/Q770766', 'display_name': 'Engineering physics', 'level': 1, 'score': 0.48846212}, {'id': 'https://openalex.org/C163258240', 'wikidata': 'https://www.wikidata.org/wiki/Q25342', 'display_name': 'Power (physics)', 'level': 2, 'score': 0.45498836}, {'id': 'https://openalex.org/C544956773', 'wikidata': 'https://www.wikidata.org/wiki/Q670', 'display_name': 'Silicon', 'level': 2, 'score': 0.42460445}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.4232976}, {'id': 'https://openalex.org/C24326235', 'wikidata': 'https://www.wikidata.org/wiki/Q126095', 'display_name': 'Electronic engineering', 'level': 1, 'score': 0.36271745}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.28028962}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.21630195}, {'id': 'https://openalex.org/C165801399', 'wikidata': 'https://www.wikidata.org/wiki/Q25428', 'display_name': 'Voltage', 'level': 2, 'score': 0.095121175}, {'id': 'https://openalex.org/C121332964', 'wikidata': 'https://www.wikidata.org/wiki/Q413', 'display_name': 'Physics', 'level': 0, 'score': 0.07264224}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.0}, {'id': 'https://openalex.org/C62520636', 'wikidata': 'https://www.wikidata.org/wiki/Q944', 'display_name': 'Quantum mechanics', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C191897082', 'wikidata': 'https://www.wikidata.org/wiki/Q11467', 'display_name': 'Metallurgy', 'level': 1, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doaj.org/article/1cd1634e5ba34b3787f00e15f3f63881', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S4306401280', 'display_name': 'DOAJ (DOAJ: Directory of Open Access Journals)', 'issn_l': None, 'issn': None, 'is_oa': True, 'is_in_doaj': False, 'is_core': False, 'host_organization': None, 'host_organization_name': None, 'host_organization_lineage': [], 'host_organization_lineage_names': [], 'type': 'repository'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [{'display_name': 'Affordable and clean energy', 'score': 0.49, 'id': 'https://metadata.un.org/sdg/7'}], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 1, 'referenced_works': ['https://openalex.org/W2543837832'], 'related_works': ['https://openalex.org/W3164416905', 'https://openalex.org/W2910419819', 'https://openalex.org/W2547004337', 'https://openalex.org/W2394855236', 'https://openalex.org/W2328046896', 'https://openalex.org/W2318746575', 'https://openalex.org/W2203765578', 'https://openalex.org/W2178533142', 'https://openalex.org/W2079977659', 'https://openalex.org/W1969620786'], 'abstract_inverted_index': {'This': [0], 'paper': [1], 'deals': [2], 'with': [3, 34], 'possibility': [4], 'of': [5, 7, 22, 30], 'application': [6], 'the': [8, 13], 'semiconductor': [9, 38], 'devices': [10, 39], 'based': [11, 24], 'on': [12], 'SiC': [14, 23], '(Silicon': [15], 'Carbide)': [16], 'inthe': [17], 'power': [18, 37], 'electronics.': [19], 'Basic': [20], 'synopsis': [21], 'materials': [25], 'problems': [26], 'are': [27], 'presented,': [28], 'appreciation': [29], 'their': [31], 'properties': [32], 'incomparison': [33], 'current': [35], 'using': [36], '((IGBT,': [40], 'MOSFET,': [41], 'CoolFET': [42], 'transistors).': [43]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W1593023019', 'counts_by_year': [{'year': 2013, 'cited_by_count': 1}], 'updated_date': '2024-12-15T00:33:26.572399', 'created_date': '2016-06-24'}