Title: Carbon doping of In/sub x/Ga/sub 1-x/As by MOCVD using CCl/sub 4/
Abstract: The use of CCl/sub 4/ as a carbon doping source for In/sub x/Ga/sub 1-x/As grown by LP-MOCVD (low-pressure metal-organic chemical vapor deposition) has been investigated for In concentrations as high as x=0.53. P-type conduction was obtained over the entire composition range studied, with hole concentrations above 1*10/sup 20/ cm/sup -3/ for x<0.12, and as high as 4.7*10/sup 18/ cm/sup -3/ for In/sub 0.53/Ga/sub 0.47/As lattice-matched to InP. Very low V/III ratios were necessary to achieve high carbon concentrations. For the growth conditions employed, the alloy composition was found to be highly dependent on several growth parameters, including CCl/sub 4/ partial pressure, V/III ratio, and growth temperature. Samples grown at low temperature ( approximately 500 degrees C) exhibited an increase in hole concentration upon post-growth annealing.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Publication Year: 2003
Publication Date: 2003-01-02
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot