Title: Design considerations of STCB OTA in CMOS 65nm with large capacitive loads
Abstract: A modified structure of OTA in CMOS 65-nm with signal- and transient-current boosting is presented in this paper. The structure uses simple cascode current mirrors to overcome channel-modulation effect of the 65-nm MOSFETs and to maintain low-error current matching. Simulations show that the parasitic poles of the OTA in CMOS 65-nm are located at very high frequencies and the achievable bandwidth is much increased with sufficient phase margin to maintain closed-loop stability.
Publication Year: 2015
Publication Date: 2015-05-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 4
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