Title: Cluster Secondary Ion Mass Spectrometry (SIMS) For Semiconductor and Metals Depth Profiling
Abstract: Sputter depth profiling has long been used to investigate the distribution of subsurface elemental species. Detection and identification of secondary ions formed during the sputtering process can provide exceptional sensitivity for many elements in a wide range of materials and forms the basis for secondary ion mass spectrometry (SIMS) depth profiling. This chapter describes the origin of some of the artifacts that currently limit SIMS depth profiling performance as well as the evolution of ion beam technology. Specific emphasis is placed on the application of cluster primary ion beams for ultra high resolution depth profiling. Examples are drawn primarily from depth profiling investigations of various semiconductor materials and metal films.
Publication Year: 2013
Publication Date: 2013-04-15
Language: en
Type: other
Indexed In: ['crossref']
Access and Citation
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot