Publication Information

{'id': 'https://openalex.org/W1515658914', 'doi': 'https://doi.org/10.1109/relphy.2003.1197736', 'title': 'Electromigration improvement with PDL TiN(Si) barrier in copper dual damascene structures', 'display_name': 'Electromigration improvement with PDL TiN(Si) barrier in copper dual damascene structures', 'publication_year': 2003, 'publication_date': '2003-12-22', 'ids': {'openalex': 'https://openalex.org/W1515658914', 'doi': 'https://doi.org/10.1109/relphy.2003.1197736', 'mag': '1515658914'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1109/relphy.2003.1197736', 'pdf_url': None, 'source': None, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'proceedings-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5027731127', 'display_name': 'Glenn Alers', 'orcid': 'https://orcid.org/0000-0003-4411-6817'}, 'institutions': [{'id': 'https://openalex.org/I4210159349', 'display_name': 'Micro Focus (United States)', 'ror': 'https://ror.org/05phbf047', 'country_code': 'US', 'type': 'company', 'lineage': ['https://openalex.org/I4210159349']}], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'G.B. Alers', 'raw_affiliation_strings': ['Novellus Svstesm., San Jose, CA', 'Novellus Systems, Inc., San Jose, CA, USA'], 'affiliations': [{'raw_affiliation_string': 'Novellus Systems, Inc., San Jose, CA, USA', 'institution_ids': ['https://openalex.org/I4210159349']}, {'raw_affiliation_string': 'Novellus Svstesm., San Jose, CA', 'institution_ids': ['https://openalex.org/I4210159349']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5059996915', 'display_name': 'A. Vijayendran', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I4210159349', 'display_name': 'Micro Focus (United States)', 'ror': 'https://ror.org/05phbf047', 'country_code': 'US', 'type': 'company', 'lineage': ['https://openalex.org/I4210159349']}], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'A. Vijayendran', 'raw_affiliation_strings': ['Novellus Svstesm., San Jose, CA', 'Novellus Systems, Inc., San Jose, CA, USA'], 'affiliations': [{'raw_affiliation_string': 'Novellus Svstesm., San Jose, CA', 'institution_ids': ['https://openalex.org/I4210159349']}, {'raw_affiliation_string': 'Novellus Systems, Inc., San Jose, CA, USA', 'institution_ids': ['https://openalex.org/I4210159349']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5040995893', 'display_name': 'Paul Gillespie', 'orcid': 'https://orcid.org/0000-0002-9743-1418'}, 'institutions': [], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'P. Gillespie', 'raw_affiliation_strings': ['International Sematech, Austin, TX, USA'], 'affiliations': [{'raw_affiliation_string': 'International Sematech, Austin, TX, USA', 'institution_ids': []}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5056164725', 'display_name': 'L. Chen', 'orcid': None}, 'institutions': [], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'L. Chen', 'raw_affiliation_strings': ['International Sematech, Austin, TX, USA'], 'affiliations': [{'raw_affiliation_string': 'International Sematech, Austin, TX, USA', 'institution_ids': []}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5030860968', 'display_name': 'Harrison J. Cox', 'orcid': 'https://orcid.org/0000-0001-5966-6083'}, 'institutions': [], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'H. Cox', 'raw_affiliation_strings': ['International Sematech, Austin, TX, USA'], 'affiliations': [{'raw_affiliation_string': 'International Sematech, Austin, TX, USA', 'institution_ids': []}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5112227080', 'display_name': 'Ka San Lam', 'orcid': None}, 'institutions': [], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'K. Lam', 'raw_affiliation_strings': ['International Sematech, Austin, TX, USA'], 'affiliations': [{'raw_affiliation_string': 'International Sematech, Austin, TX, USA', 'institution_ids': []}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5042278366', 'display_name': 'Rod Augur', 'orcid': None}, 'institutions': [], 'countries': [], 'is_corresponding': False, 'raw_author_name': 'R. Augur', 'raw_affiliation_strings': ['International Sematech, Austin, TX'], 'affiliations': [{'raw_affiliation_string': 'International Sematech, Austin, TX', 'institution_ids': []}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5111476915', 'display_name': 'Kevin Shannon', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I4210159349', 'display_name': 'Micro Focus (United States)', 'ror': 'https://ror.org/05phbf047', 'country_code': 'US', 'type': 'company', 'lineage': ['https://openalex.org/I4210159349']}], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'K. Shannon', 'raw_affiliation_strings': ['Novellus Svstesm., San Jose, CA', 'Novellus Systems, Inc., San Jose, CA, USA'], 'affiliations': [{'raw_affiliation_string': 'Novellus Svstesm., San Jose, CA', 'institution_ids': ['https://openalex.org/I4210159349']}, {'raw_affiliation_string': 'Novellus Systems, Inc., San Jose, CA, USA', 'institution_ids': ['https://openalex.org/I4210159349']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5090937397', 'display_name': 'S. Pfeifer', 'orcid': None}, 'institutions': [], 'countries': [], 'is_corresponding': False, 'raw_author_name': 'S. Pfeifer', 'raw_affiliation_strings': ['International Sematech, Austin, TX'], 'affiliations': [{'raw_affiliation_string': 'International Sematech, Austin, TX', 'institution_ids': []}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5024560515', 'display_name': 'M. Daněk', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I4210159349', 'display_name': 'Micro Focus (United States)', 'ror': 'https://ror.org/05phbf047', 'country_code': 'US', 'type': 'company', 'lineage': ['https://openalex.org/I4210159349']}], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'M. Danek', 'raw_affiliation_strings': ['Novellus Svstesm., San Jose, CA', 'Novellus Systems, Inc., San Jose, CA, USA'], 'affiliations': [{'raw_affiliation_string': 'Novellus Svstesm., San Jose, CA', 'institution_ids': ['https://openalex.org/I4210159349']}, {'raw_affiliation_string': 'Novellus Systems, Inc., San Jose, CA, USA', 'institution_ids': ['https://openalex.org/I4210159349']}]}], 'institution_assertions': [], 'countries_distinct_count': 1, 'institutions_distinct_count': 1, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': None, 'apc_paid': None, 'fwci': 0.998, 'has_fulltext': True, 'fulltext_origin': 'ngrams', 'cited_by_count': 4, 'citation_normalized_percentile': {'value': 0.764254, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 72, 'max': 74}, 'biblio': {'volume': None, 'issue': None, 'first_page': '151', 'last_page': '155'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T11661', 'display_name': 'Copper Interconnects and Reliability', 'score': 0.9998, 'subfield': {'id': 'https://openalex.org/subfields/2504', 'display_name': 'Electronic, Optical and Magnetic Materials'}, 'field': {'id': 'https://openalex.org/fields/25', 'display_name': 'Materials Science'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T11661', 'display_name': 'Copper Interconnects and Reliability', 'score': 0.9998, 'subfield': {'id': 'https://openalex.org/subfields/2504', 'display_name': 'Electronic, Optical and Magnetic Materials'}, 'field': {'id': 'https://openalex.org/fields/25', 'display_name': 'Materials Science'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10460', 'display_name': 'Electronic Packaging and Soldering Technologies', 'score': 0.974, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10472', 'display_name': 'Semiconductor materials and devices', 'score': 0.973, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/electromigration', 'display_name': 'Electromigration', 'score': 0.954149}, {'id': 'https://openalex.org/keywords/copper-interconnect', 'display_name': 'Copper interconnect', 'score': 0.9337566}, {'id': 'https://openalex.org/keywords/diffusion-barrier', 'display_name': 'Diffusion barrier', 'score': 0.7405025}, {'id': 'https://openalex.org/keywords/barrier-layer', 'display_name': 'Barrier layer', 'score': 0.5549411}, {'id': 'https://openalex.org/keywords/chemical-mechanical-planarization', 'display_name': 'Chemical Mechanical Planarization', 'score': 0.5052958}, {'id': 'https://openalex.org/keywords/physical-vapor-deposition', 'display_name': 'Physical vapor deposition', 'score': 0.4201172}], 'concepts': [{'id': 'https://openalex.org/C138055206', 'wikidata': 'https://www.wikidata.org/wiki/Q1319010', 'display_name': 'Electromigration', 'level': 2, 'score': 0.954149}, {'id': 'https://openalex.org/C116372231', 'wikidata': 'https://www.wikidata.org/wiki/Q605757', 'display_name': 'Copper interconnect', 'level': 3, 'score': 0.9337566}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.7657708}, {'id': 'https://openalex.org/C544778455', 'wikidata': 'https://www.wikidata.org/wiki/Q753', 'display_name': 'Copper', 'level': 2, 'score': 0.7648997}, {'id': 'https://openalex.org/C2778836790', 'wikidata': 'https://www.wikidata.org/wiki/Q5275435', 'display_name': 'Diffusion barrier', 'level': 3, 'score': 0.7405025}, {'id': 'https://openalex.org/C525849907', 'wikidata': 'https://www.wikidata.org/wiki/Q1096', 'display_name': 'Tin', 'level': 2, 'score': 0.69336265}, {'id': 'https://openalex.org/C2779833192', 'wikidata': 'https://www.wikidata.org/wiki/Q17015866', 'display_name': 'Barrier layer', 'level': 3, 'score': 0.5549411}, {'id': 'https://openalex.org/C61427134', 'wikidata': 'https://www.wikidata.org/wiki/Q847609', 'display_name': 'Sputter deposition', 'level': 4, 'score': 0.54564774}, {'id': 'https://openalex.org/C180088628', 'wikidata': 'https://www.wikidata.org/wiki/Q1069404', 'display_name': 'Chemical-mechanical planarization', 'level': 3, 'score': 0.5052958}, {'id': 'https://openalex.org/C38347018', 'wikidata': 'https://www.wikidata.org/wiki/Q905958', 'display_name': 'Plasma-enhanced chemical vapor deposition', 'level': 3, 'score': 0.4724068}, {'id': 'https://openalex.org/C2779227376', 'wikidata': 'https://www.wikidata.org/wiki/Q6505497', 'display_name': 'Layer (electronics)', 'level': 2, 'score': 0.4586146}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.4526262}, {'id': 'https://openalex.org/C22423302', 'wikidata': 'https://www.wikidata.org/wiki/Q898444', 'display_name': 'Sputtering', 'level': 3, 'score': 0.42961118}, {'id': 'https://openalex.org/C51576277', 'wikidata': 'https://www.wikidata.org/wiki/Q900134', 'display_name': 'Physical vapor deposition', 'level': 3, 'score': 0.4201172}, {'id': 'https://openalex.org/C159985019', 'wikidata': 'https://www.wikidata.org/wiki/Q181790', 'display_name': 'Composite material', 'level': 1, 'score': 0.36146933}, {'id': 'https://openalex.org/C191897082', 'wikidata': 'https://www.wikidata.org/wiki/Q11467', 'display_name': 'Metallurgy', 'level': 1, 'score': 0.36001277}, {'id': 'https://openalex.org/C57410435', 'wikidata': 'https://www.wikidata.org/wiki/Q505668', 'display_name': 'Chemical vapor deposition', 'level': 2, 'score': 0.32918197}, {'id': 'https://openalex.org/C171250308', 'wikidata': 'https://www.wikidata.org/wiki/Q11468', 'display_name': 'Nanotechnology', 'level': 1, 'score': 0.22516912}, {'id': 'https://openalex.org/C19067145', 'wikidata': 'https://www.wikidata.org/wiki/Q1137203', 'display_name': 'Thin film', 'level': 2, 'score': 0.19247678}, {'id': 'https://openalex.org/C2781448156', 'wikidata': 'https://www.wikidata.org/wiki/Q1570182', 'display_name': 'Coating', 'level': 2, 'score': 0.0600394}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1109/relphy.2003.1197736', 'pdf_url': None, 'source': None, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [{'score': 0.64, 'id': 'https://metadata.un.org/sdg/10', 'display_name': 'Reduced inequalities'}], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 1, 'referenced_works': ['https://openalex.org/W2045049626'], 'related_works': ['https://openalex.org/W2801860852', 'https://openalex.org/W2153232926', 'https://openalex.org/W2128384320', 'https://openalex.org/W2106480950', 'https://openalex.org/W2093446013', 'https://openalex.org/W2082831914', 'https://openalex.org/W2075171636', 'https://openalex.org/W2057911650', 'https://openalex.org/W2039036129', 'https://openalex.org/W1982820757'], 'abstract_inverted_index': {'A': [0], 'significant': [1], 'improvement': [2], 'in': [3, 91, 97], 'electromigration': [4, 89], 'performance': [5], 'for': [6, 55], 'copper': [7, 24, 41, 61], 'dual': [8], 'damascene': [9], 'structures': [10], 'was': [11, 39, 53], 'observed': [12], 'with': [13], 'the': [14, 45, 56, 71, 74], 'use': [15], 'of': [16, 29, 73], 'Pulsed': [17], 'Deposition': [18], 'Layer': [19], '(PDL)': [20], 'TiN(Si)': [21], 'as': [22], 'a': [23], 'diffusion': [25], 'barrier': [26, 69], 'layer': [27], 'instead': [28], 'conventional': [30], 'sputtered': [31], '(PVD)': [32], 'Ta/TaN.': [33], 'When': [34], 'an': [35], 'Ar': [36], 'sputter': [37], 'preclean': [38], 'used,': [40], 'agglomeration': [42, 62], 'occurred': [43], 'during': [44], 'high': [46], 'temperature': [47], 'PDL': [48, 57], 'process.': [49], 'An': [50], 'integration': [51], 'method': [52], 'developed': [54], 'film': [58], 'that': [59], 'avoids': [60], 'on': [63], 'via': [64, 81, 84], 'sidewalls': [65], 'and': [66, 87, 101], 'has': [67], 'minimal': [68], 'at': [70], 'bottom': [72], 'via.': [75], 'The': [76], 'resulting': [77], 'process': [78], 'had': [79], 'lower': [80], 'resistance,': [82], 'improved': [83], 'stress': [85], 'migration': [86], 'longer': [88], 'lifetime': [90], 'multi-link': [92], 'testers': [93], 'than': [94], 'PVD': [95], 'Ta/TaN': [96], 'both': [98], 'SiO/sub': [99], '2/': [100], 'PECVD': [102], 'SiOC': [103], 'low': [104], 'k': [105], 'dielectrics.': [106]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W1515658914', 'counts_by_year': [{'year': 2018, 'cited_by_count': 1}], 'updated_date': '2024-12-10T08:35:13.263216', 'created_date': '2016-06-24'}