Abstract: Chapter 3 Electron Beam Lithography Christophe Constancias, Christophe ConstanciasSearch for more papers by this authorStefan Landis, Stefan LandisSearch for more papers by this authorSerdar Manakli, Serdar ManakliSearch for more papers by this authorLuc Martin, Luc MartinSearch for more papers by this authorLaurent Pain, Laurent PainSearch for more papers by this authorDavid Rio, David RioSearch for more papers by this author Christophe Constancias, Christophe ConstanciasSearch for more papers by this authorStefan Landis, Stefan LandisSearch for more papers by this authorSerdar Manakli, Serdar ManakliSearch for more papers by this authorLuc Martin, Luc MartinSearch for more papers by this authorLaurent Pain, Laurent PainSearch for more papers by this authorDavid Rio, David RioSearch for more papers by this author Book Editor(s):Stefan Landis, Stefan LandisSearch for more papers by this author First published: 01 March 2013 https://doi.org/10.1002/9781118557662.ch3Citations: 4 AboutPDFPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShareShare a linkShare onFacebookTwitterLinked InRedditWechat Summary This chapter contains sections titled: Introduction Different equipment, its operation and limits: current and future solutions Maskless photolithography Alignment Electron-sensitive resists Electron–matter interaction Physical effect of electronic bombardment in the target Physical limitations of e-beam lithography Electrons energy loss mechanisms Database preparation E-beam lithography equipment E-beam resist process Bibliography Citing Literature Lithography RelatedInformation
Publication Year: 2013
Publication Date: 2013-03-01
Language: en
Type: other
Indexed In: ['crossref']
Access and Citation
Cited By Count: 8
AI Researcher Chatbot
Get quick answers to your questions about the article from our AI researcher chatbot