Title: Electron paramagnetic resonance study of defects in SiC
Abstract: Silicon carbide (SiC) is a wide bandgap semiconductor (energy gap of 3.26 eV and 3.03 eV for 4Hand 6H-SiC, respectively). With outstanding physical and electronic properties, SiC is a promising mat ...
Publication Year: 2010
Publication Date: 2010-01-01
Language: en
Type: article
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