Yee‐Chia Yeo - AILBRY - Article Search

Results for 'Yee‐Chia Yeo' :

Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source

Publication Year: 2008

DOI: https://doi.org/10.1143/jjap.47.2593

Abstract:

Authors:
- Eng-Huat Toh
- Grace Huiqi Wang
- Lap Chan
- Dennis Sylvester
- Chun-Huat Heng
- Ganesh S. Samudra
- Yee‐Chia Yeo
Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology

Publication Year: 2002

DOI: https://doi.org/10.1063/1.1521517

Abstract:

Authors:
- Yee‐Chia Yeo
- Tsu-Jae King
- Chenming Hu
Symmetrical Negative Differential Resistance Behavior of a Resistive Switching Device

Publication Year: 2012

DOI: https://doi.org/10.1021/nn204907t

Abstract:

Authors:
- Yuanmin Du
- Hui Pan
- Shijie Wang
- Tom Wu
- Yuan Ping Feng
- Jisheng Pan
- Andrew T. S. Wee
Nonvolatile Flash Memory Device Using Ge Nanocrystals Embedded in HfAlO High-&lt;tex&gt;$kappa$&lt;/tex&gt;Tunneling and Control Oxides: Device Fabrication and Electrical Performance

Publication Year: 2004

DOI: https://doi.org/10.1109/ted.2004.837011

Abstract:

Authors:
- Jianhui Chen
- Y.Q. Wang
- Won Jong Yoo
- Yee‐Chia Yeo
- Ganesh Samudra
- D.S.H. Chan
- An Du
- Dim‐Lee Kwong
Silane and Ammonia Surface Passivation Technology for High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs

Publication Year: 2010

DOI: https://doi.org/10.1109/ted.2010.2044285

Abstract:

Authors:
- Hock-Chun Chin
- Xinke Liu
- Xiao Gong
- Yee‐Chia Yeo
Imported Monkeypox, Singapore

Publication Year: 2020

DOI: https://doi.org/10.3201/eid2608.191387

Abstract:

Authors:
- Sarah Ee Fang Yong
- Oon Tek Ng
- Zheng Jie Marc Ho
- Tze Minn Mak
- Kalisvar Marimuthu
- Shawn Vasoo
- Tsin Wen Yeo
- Yi Kai Ng
- Lin Cui
- Zannatul Ferdous
- Po Ying Chia
- Bryan Jun Wei Aw
- Charmaine Malenab Manauis
- Constance Low
- Guanhao Chan
- Xinyi Peh
- Poh Lian Lim
- Angela Chow
- Mónica Chan
- Vernon Jian Ming Lee
- Raymond Tzer Pin Lin
- Mok Kwee Derrick Heng
- Yee‐Sin Leo
Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications

Publication Year: 2017

DOI: https://doi.org/10.1109/ted.2017.2717934

Abstract:

Authors:
- Ruize Sun
- Yung C. Liang
- Yee‐Chia Yeo
- Cezhou Zhao
New materials for post-Si computing: Ge and GeSn devices

Publication Year: 2014

DOI: https://doi.org/10.1557/mrs.2014.163

Abstract:

Authors:
- Suyog Gupta
- Xiao Gong
- Rui Zhang
- Yee‐Chia Yeo
- Shinichi Takagi
- Krishna C. Saraswat
N-Channel (110)-Sidewall Strained FinFETs With Silicon–Carbon Source and Drain Stressors and Tensile Capping Layer

Publication Year: 2007

DOI: https://doi.org/10.1109/led.2007.908495

Abstract:

Authors:
- Tsung-Yang Liow
- Kian-Ming Tan
- Rinus T. P. Lee
- Chih-Hang Tung
- Ganesh S. Samudra
- N. Balasubramanian
- Yee‐Chia Yeo
Electronic band structures and optical gain spectra of strained wurtzite GaN-Al/sub x/Ga/sub 1-x/N quantum-well lasers

Publication Year: 1998

DOI: https://doi.org/10.1109/3.661462

Abstract:

Authors:
- Yee‐Chia Yeo
- Tow Chong Chong
- Ming-Fu Li
- W. J. Fan
Toward Conformal Damage-Free Doping With Abrupt Ultrashallow Junction: Formation of Si Monolayers and Laser Anneal as a Novel Doping Technique for InGaAs nMOSFETs

Publication Year: 2014

DOI: https://doi.org/10.1109/ted.2014.2306934

Abstract:

Authors:
- Eugene Y.-J. Kong
- Pengfei Guo
- Xiao Gong
- Bin Liu
- Yee‐Chia Yeo
Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon–Carbon Source/Drain Regions

Publication Year: 2007

DOI: https://doi.org/10.1109/ted.2007.906941

Abstract:

Authors:
- Kah‐Wee Ang
- King-Jien Chui
- Chih-Hang Tung
- Narayanan Balasubramanian
- Ganesh S. Samudra
- Yee‐Chia Yeo
Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47As

Publication Year: 2011

DOI: https://doi.org/10.1063/1.3607959

Abstract:

Authors:
- Ivana Ivana
- Jisheng Pan
- Zheng Zhang
- Xingui Zhang
- Huaxin Guo
- Xiao Gong
- Yee‐Chia Yeo
Understanding the multistate SET process in Ge-Sb-Te-based phase-change memory

Publication Year: 2012

DOI: https://doi.org/10.1063/1.4748961

Abstract:

Authors:
- Jonathan M. Skelton
- Desmond K. Loke
- T. H. Lee
- Stephen R. Elliott
Study of surface passivation of strained indium gallium arsenide by vacuum annealing and silane treatment

Publication Year: 2008

DOI: https://doi.org/10.1063/1.3010303

Abstract:

Authors:
- Hock-Chun Chin
- Benzhong Wang
- Poh Chong Lim
- Lei-Jun Tang
- Chih-Hang Tung
- Yee‐Chia Yeo

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AILBRY - Article Search

Results for 'Yee‐Chia Yeo' :

Device Design and Scalability of a Double-Gate Tunneling Field-Effect Transistor with Silicon–Germanium Source

Metal-dielectric band alignment and its implications for metal gate complementary metal-oxide-semiconductor technology

Symmetrical Negative Differential Resistance Behavior of a Resistive Switching Device

Nonvolatile Flash Memory Device Using Ge Nanocrystals Embedded in HfAlO High-&amp;lt;tex&amp;gt;$kappa$&amp;lt;/tex&amp;gt;Tunneling and Control Oxides: Device Fabrication and Electrical Performance

Silane and Ammonia Surface Passivation Technology for High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs

Imported Monkeypox, Singapore

Au-Free AlGaN/GaN MIS-HEMTs With Embedded Current Sensing Structure for Power Switching Applications

New materials for post-Si computing: Ge and GeSn devices

N-Channel (110)-Sidewall Strained FinFETs With Silicon–Carbon Source and Drain Stressors and Tensile Capping Layer

Electronic band structures and optical gain spectra of strained wurtzite GaN-Al/sub x/Ga/sub 1-x/N quantum-well lasers

Toward Conformal Damage-Free Doping With Abrupt Ultrashallow Junction: Formation of Si Monolayers and Laser Anneal as a Novel Doping Technique for InGaAs nMOSFETs

Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon–Carbon Source/Drain Regions

Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47As

Understanding the multistate SET process in Ge-Sb-Te-based phase-change memory

Study of surface passivation of strained indium gallium arsenide by vacuum annealing and silane treatment

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Nonvolatile Flash Memory Device Using Ge Nanocrystals Embedded in HfAlO High-<tex>$kappa$</tex>Tunneling and Control Oxides: Device Fabrication and Electrical Performance