B Algan - AILBRY - Article Search

Results for 'B Algan' :

A High Quantum Efficiency Narrow-Band UV-B AlGaN p-i-n Photodiode With Polarization Assistance

Publication Year: 2021

DOI: https://doi.org/10.1109/jphot.2021.3086855

Abstract:

Authors:
- Qianyu Hou
- Haifan You
- Qing Cai
- Hui Guo
- Pengfei Shao
- Danfeng Pan
- Le Yu
- Dunjun Chen
- Hai Lu
- Rong Zhang
- Youdou Zheng
Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs

Publication Year: 2017

DOI: https://doi.org/10.1364/prj.5.000a44

Abstract:

Authors:
- Carlo De Santi
- Matteo Meneghini
- Desirée Monti
- Johannes Glaab
- Martin Guttmann
- Jens Raß
- S. Einfeldt
- Frank Mehnke
- Johannes Enslin
- Tim Wernicke
- Michael Kneissl
- Gaudenzio Meneghesso
- E. Zanoni
AlGaN-based UV-B laser diode with a high optical confinement factor

Publication Year: 2021

DOI: https://doi.org/10.1063/5.0046224

Abstract:

Authors:
- Shunya Tanaka
- Yuya Ogino
- Kazuki Yamada
- Tomoya Omori
- Reo Ogura
- Shohei Teramura
- Moe Shimokawa
- Sayaka Ishizuka
- Ayumu Yabutani
- Sho Iwayama
- Kosuke Sato
- Hideto Miyake
- Motoaki Iwaya
- Tetsuya Takeuchi
- Satoshi Kamiyama
- Isamu Akasaki
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures – Part B: Sensor applications

Publication Year: 2003

DOI: https://doi.org/10.1002/pssc.200303139

Abstract:

Authors:
- Martin Eickhoff
- J. Schalwig
- Gustav Steinhoff
- O. Weidemann
- L. Görgens
- R. Neuberger
- Martin Hermann
- Barbara Baur
- Gerhard Müller
- O. Ambacher
- M. Stutzmann
13 mW operation of a 295–310 nm AlGaN UV-B LED with a p-AlGaN transparent contact layer for real world applications

Publication Year: 2018

DOI: https://doi.org/10.1039/c8tc03825b

Abstract:

Authors:
- M. Ajmal Khan
- Noritoshi Maeda
- Masafumi Jo
- Yuki Akamatsu
- Ryohei Tanabe
- Yoichi Yamada
- Hideki Hirayama
Defect-Related Degradation of AlGaN-Based UV-B LEDs

Publication Year: 2016

DOI: https://doi.org/10.1109/ted.2016.2631720

Abstract:

Authors:
- Desirée Monti
- Matteo Meneghini
- Carlo De Santi
- Gaudenzio Meneghesso
- E. Zanoni
- Johannes Glaab
- Jens Raß
- S. Einfeldt
- Frank Mehnke
- Johannes Enslin
- Tim Wernicke
- Michael Kneissl
Demonstration of ultraviolet-B AlGaN-based laser diode operation with a peak light output power of 150 mW by improving injection efficiency through polarization charge modulation

Publication Year: 2022

DOI: https://doi.org/10.1063/5.0135033

Abstract:

Authors:
- Ryosuke Kondo
- Ayumu Yabutani
- Tomoya Omori
- Kazuki Yamada
- Eri Matsubara
- Ryota Hasegawa
- Toma Nishibayashi
- Sho Iwayama
- Tetsuya Takeuchi
- Satoshi Kamiyama
- Hideto Miyake
- Motoaki Iwaya
Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al<sub>0.6</sub>Ga<sub>0.4</sub>N/AlN/sapphire

Publication Year: 2020

DOI: https://doi.org/10.35848/1882-0786/ab7711

Abstract:

Authors:
- Kosuke Sato
- Shinji Yasue
- Kazuki Yamada
- Shunya Tanaka
- Tomoya Omori
- Sayaka Ishizuka
- Shohei Teramura
- Yuya Ogino
- Sho Iwayama
- Hideto Miyake
- Motoaki Iwaya
- Tetsuya Takeuchi
- Satoshi Kamiyama
- Isamu Akasaki
Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping

Publication Year: 2020

DOI: https://doi.org/10.35848/1882-0786/ab9e4a

Abstract:

Authors:
- Tomoya Omori
- Sayaka Ishizuka
- Shunya Tanaka
- Shinji Yasue
- Kosuke Sato
- Yuya Ogino
- Shohei Teramura
- Kazuki Yamada
- Sho Iwayama
- Hideto Miyake
- Motoaki Iwaya
- Tetsuya Takeuchi
- Satoshi Kamiyama
- Isamu Akasaki
High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes

Publication Year: 2019

DOI: https://doi.org/10.1109/ted.2019.2920521

Abstract:

Authors:
- Desirée Monti
- Carlo De Santi
- Silvia Da Ruos
- Francesco Piva
- Johannes Glaab
- Jens Raß
- S. Einfeldt
- Frank Mehnke
- Johannes Enslin
- Tim Wernicke
- Michael Kneissl
- Gaudenzio Meneghesso
- E. Zanoni
- Matteo Meneghini
Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers

Publication Year: 2020

DOI: https://doi.org/10.35848/1882-0786/ab7caf

Abstract:

Authors:
- Shunya Tanaka
- Yuta Kawase
- Shohei Teramura
- Sho Iwayama
- Kosuke Sato
- Shinji Yasue
- Tomoya Omori
- Motoaki Iwaya
- Tetsuya Takeuchi
- Satoshi Kamiyama
- Isamu Akasaki
- Hideto Miyake
Recent Progress of Electrically Pumped AlGaN Diode Lasers in the UV-B and -C Bands

Publication Year: 2021

DOI: https://doi.org/10.3390/photonics8070267

Abstract:

Authors:
- Syed M. N. Hasan
- Weicheng You
- Md Saiful Islam Sumon
- Shamsul Arafin
Temperature dependence of nonradiative recombination processes in UV-B AlGaN quantum well revealed by below-gap excitation light

Publication Year: 2020

DOI: https://doi.org/10.1016/j.optmat.2020.109878

Abstract:

Authors:
- M. Ismail Hossain
- Yuri Itokazu
- Shunsuke Kuwaba
- Norihiko Kamata
- Hideki Hirayama
Doping-induced energy barriers to improve the current spreading effect for AlGaN-based ultraviolet-B light-emitting diodes

Publication Year: 2020

DOI: https://doi.org/10.1109/led.2020.2997476

Abstract:

Authors:
- Jiamang Che
- Hua Shao
- Le Chang
- Jianquan Kou
- Kangkai Tian
- Chunshuang Chu
- Yonghui Zhang
- Wengang Bi
- Zi‐Hui Zhang
AlGaN-based UV-B laser diode with a wavelength of 290 nm on 1 μm periodic concavo–convex pattern AlN on a sapphire substrate

Publication Year: 2021

DOI: https://doi.org/10.35848/1882-0786/abf763

Abstract:

Authors:
- Shunya Tanaka
- Shohei Teramura
- Moe Shimokawa
- Kazuki Yamada
- Tomoya Omori
- Sho Iwayama
- Kosuke Sato
- Hideto Miyake
- Motoaki Iwaya
- Tetsuya Takeuchi
- Satoshi Kamiyama
- Isamu Akasaki

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AILBRY - Article Search

Results for 'B Algan' :

A High Quantum Efficiency Narrow-Band UV-B AlGaN p-i-n Photodiode With Polarization Assistance

Recombination mechanisms and thermal droop in AlGaN-based UV-B LEDs

AlGaN-based UV-B laser diode with a high optical confinement factor

Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures – Part B: Sensor applications

13 mW operation of a 295–310 nm AlGaN UV-B LED with a p-AlGaN transparent contact layer for real world applications

Defect-Related Degradation of AlGaN-Based UV-B LEDs

Demonstration of ultraviolet-B AlGaN-based laser diode operation with a peak light output power of 150 mW by improving injection efficiency through polarization charge modulation

Room-temperature operation of AlGaN ultraviolet-B laser diode at 298 nm on lattice-relaxed Al<sub>0.6</sub>Ga<sub>0.4</sub>N/AlN/sapphire

Internal loss of AlGaN-based ultraviolet-B band laser diodes with p-type AlGaN cladding layer using polarization doping

High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes

Effect of dislocation density on optical gain and internal loss of AlGaN-based ultraviolet-B band lasers

Recent Progress of Electrically Pumped AlGaN Diode Lasers in the UV-B and -C Bands

Temperature dependence of nonradiative recombination processes in UV-B AlGaN quantum well revealed by below-gap excitation light

Doping-induced energy barriers to improve the current spreading effect for AlGaN-based ultraviolet-B light-emitting diodes

AlGaN-based UV-B laser diode with a wavelength of 290 nm on 1 μm periodic concavo–convex pattern AlN on a sapphire substrate

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