Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide

Name: Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide
Uploaded: 1998-03-01
H.S. Momose; Shigenari Nakamura; T. Ohguro; T. Yoshitomi; E. Morifuji; T. Morimoto; Y. Katsumata; Hiroshi Iwai
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