Title: Device characteristics of a quasi-SOI power MOSFET
Abstract: The device characteristics of a quasi-SOI power MOSFET were investigated to obtain its optimum device structure. Its short channel effect was larger than the conventional SOI power MOSFET. We analyzed this effect and found a way to suppress it.
Publication Year: 2002
Publication Date: 2002-11-27
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 1
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