Title: Model of DOS near the Top of Valence Band in Strained Si<sub>1-x</sub>Ge<sub>x</sub>/(001)Si
Abstract: Strained Si 1-x Ge x technology has been widely adopted to enhance hole mobility. One of the most important physical parameters is density of state near the top of valence band in strained Si 1-x Ge x materials. In this paper, we first obtained the hole effective mass along arbitrarily k wavevector directions, the hole isotropic effective masses and density of state effective mass of hole in strained Si 1-x Ge x /(001)Si with the framework of K.P theory. And then, model of density of state near the top of valence band in strained Si 1-x Ge x /(001)Si materials was established, which can provide valuable references to the understanding on its material physics and theoretical basis on the other important physical parameters.
Publication Year: 2011
Publication Date: 2011-05-03
Language: en
Type: article
Indexed In: ['crossref']
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