Title: THE GROWTH OF SINGLE-CRYSTAL FILMS OF CUBIC SILICON CARBIDE ON SILICON
Abstract: Thin single-crystal films of cubic silicon carbide have been grown on silicon substrates within the temperature range 800- 1000°C in high and ultrahigh vacuum by the reaction of unsaturated hydrocarbons, C2H and C2H4 with silicon. The cubic silicon carbide grows with a parallel orientation onto silicon, regardless of crystal orientation. The use of ultrahigh vacuum results in high crystal perfection.
Publication Year: 1967
Publication Date: 1967-07-01
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 67
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