Title: Feasibility of atomic layer etching of polymer material based on sequential O2 exposure and Ar low-pressure plasma-etching
Abstract:We describe controlled, self-limited etching of a polystyrene polymer using a composite etching cycle consisting of sequential deposition of a thin reactive layer from precursors produced from a polym...We describe controlled, self-limited etching of a polystyrene polymer using a composite etching cycle consisting of sequential deposition of a thin reactive layer from precursors produced from a polymer-coated electrode within the etching chamber, modification using O2 exposure, and subsequent low-pressure Ar plasma etching, which removes the oxygen-modified deposited reactive layer along with ≈0.1 nm unmodified polymer. Deposition prevents net etching of the unmodified polymer during the etching step and enables self-limited etch rates of 0.1 nm/cycle.Read More
Publication Year: 2013
Publication Date: 2013-06-24
Language: en
Type: article
Indexed In: ['crossref']
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Cited By Count: 34
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