Title: Reliability of gate oxide grown on nitrogen-implanted Si substrates
Abstract: Direct nitrogen implant into Si substrate prior to gate oxidation has been proposed to grow multiple gate oxide thicknesses on a single wafer. In this letter, we have studied the reliability of gate oxide grown on nitrogen-implanted Si substrate. The effects of implant doses, sacrificial oxide thicknesses, and gate oxide thicknesses on gate oxide reliability have been investigated. It was found that there is a tradeoff between oxide thickness control and gate oxide reliability.
Publication Year: 1996
Publication Date: 1996-12-09
Language: en
Type: article
Indexed In: ['crossref']
Access and Citation
Cited By Count: 25
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