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{'id': 'https://openalex.org/W1966895782', 'doi': 'https://doi.org/10.1557/proc-567-275', 'title': 'Effects of Inversion Layer Quantization and Polysilicon Gate Depletion on Tunneling Current of Ultra-Thin SiO<sub>2</sub> Gate Material', 'display_name': 'Effects of Inversion Layer Quantization and Polysilicon Gate Depletion on Tunneling Current of Ultra-Thin SiO<sub>2</sub> Gate Material', 'publication_year': 1999, 'publication_date': '1999-01-01', 'ids': {'openalex': 'https://openalex.org/W1966895782', 'doi': 'https://doi.org/10.1557/proc-567-275', 'mag': '1966895782'}, 'language': 'en', 'primary_location': {'is_oa': False, 'landing_page_url': 'https://doi.org/10.1557/proc-567-275', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S2530005873', 'display_name': 'MRS Proceedings', 'issn_l': '0272-9172', 'issn': ['0272-9172', '1946-4274'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310311721', 'host_organization_name': 'Cambridge University Press', 'host_organization_lineage': ['https://openalex.org/P4310311721', 'https://openalex.org/P4310311702'], 'host_organization_lineage_names': ['Cambridge University Press', 'University of Cambridge'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}, 'type': 'article', 'type_crossref': 'journal-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': False, 'oa_status': 'closed', 'oa_url': None, 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5070458497', 'display_name': 'Samar K. Saha', 'orcid': 'https://orcid.org/0000-0002-5687-591X'}, 'institutions': [{'id': 'https://openalex.org/I4210109870', 'display_name': 'Vi Technology (United States)', 'ror': 'https://ror.org/016mnbp44', 'country_code': 'US', 'type': 'company', 'lineage': ['https://openalex.org/I4210109870']}], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'S. Saha', 'raw_affiliation_strings': ['Technology Development, VLSI Technology, Inc., San Jose, CA 95131, [email protected]'], 'affiliations': [{'raw_affiliation_string': 'Technology Development, VLSI Technology, Inc., San Jose, CA 95131, [email protected]', 'institution_ids': ['https://openalex.org/I4210109870']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5086381554', 'display_name': 'G. Srinivasan', 'orcid': 'https://orcid.org/0000-0002-0010-5254'}, 'institutions': [{'id': 'https://openalex.org/I4210109870', 'display_name': 'Vi Technology (United States)', 'ror': 'https://ror.org/016mnbp44', 'country_code': 'US', 'type': 'company', 'lineage': ['https://openalex.org/I4210109870']}], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'G. Srinivasan', 'raw_affiliation_strings': ['Technology Development, VLSI Technology, Inc., San Jose, CA 95131, [email protected]'], 'affiliations': [{'raw_affiliation_string': 'Technology Development, VLSI Technology, Inc., San Jose, CA 95131, [email protected]', 'institution_ids': ['https://openalex.org/I4210109870']}]}, {'author_position': 'middle', 'author': {'id': 'https://openalex.org/A5054784397', 'display_name': 'G.A. Rezvani', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I4210109870', 'display_name': 'Vi Technology (United States)', 'ror': 'https://ror.org/016mnbp44', 'country_code': 'US', 'type': 'company', 'lineage': ['https://openalex.org/I4210109870']}], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'G. A. Rezvani', 'raw_affiliation_strings': ['Technology Development, VLSI Technology, Inc., San Jose, CA 95131, [email protected]'], 'affiliations': [{'raw_affiliation_string': 'Technology Development, VLSI Technology, Inc., San Jose, CA 95131, [email protected]', 'institution_ids': ['https://openalex.org/I4210109870']}]}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5062539535', 'display_name': 'Michaela Farr', 'orcid': None}, 'institutions': [{'id': 'https://openalex.org/I4210109870', 'display_name': 'Vi Technology (United States)', 'ror': 'https://ror.org/016mnbp44', 'country_code': 'US', 'type': 'company', 'lineage': ['https://openalex.org/I4210109870']}], 'countries': ['US'], 'is_corresponding': False, 'raw_author_name': 'M. Farr', 'raw_affiliation_strings': ['Technology Development, VLSI Technology, Inc., San Jose, CA 95131, [email protected]'], 'affiliations': [{'raw_affiliation_string': 'Technology Development, VLSI Technology, Inc., San Jose, CA 95131, [email protected]', 'institution_ids': ['https://openalex.org/I4210109870']}]}], 'institution_assertions': [], 'countries_distinct_count': 1, 'institutions_distinct_count': 1, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': None, 'apc_paid': None, 'fwci': 0.82, 'has_fulltext': True, 'fulltext_origin': 'ngrams', 'cited_by_count': 3, 'citation_normalized_percentile': {'value': 0.495572, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 67, 'max': 70}, 'biblio': {'volume': '567', 'issue': None, 'first_page': None, 'last_page': None}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10558', 'display_name': 'Nanoelectronics and Transistors', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10558', 'display_name': 'Nanoelectronics and Transistors', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10472', 'display_name': 'Atomic Layer Deposition Technology', 'score': 1.0, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T14117', 'display_name': 'Failure Analysis of Integrated Circuits', 'score': 0.9999, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/polysilicon-depletion-effect', 'display_name': 'Polysilicon depletion effect', 'score': 0.5720746}, {'id': 'https://openalex.org/keywords/equivalent-oxide-thickness', 'display_name': 'Equivalent oxide thickness', 'score': 0.54330415}, {'id': 'https://openalex.org/keywords/gate-oxides', 'display_name': 'Gate Oxides', 'score': 0.517561}, {'id': 'https://openalex.org/keywords/double-gate-transistors', 'display_name': 'Double-Gate Transistors', 'score': 0.507867}, {'id': 'https://openalex.org/keywords/leakage', 'display_name': 'Leakage (economics)', 'score': 0.43732733}, {'id': 'https://openalex.org/keywords/silc', 'display_name': 'SILC', 'score': 0.41089386}], 'concepts': [{'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.85017514}, {'id': 'https://openalex.org/C152909973', 'wikidata': 'https://www.wikidata.org/wiki/Q7804816', 'display_name': 'Time-dependent gate oxide breakdown', 'level': 5, 'score': 0.8088423}, {'id': 'https://openalex.org/C2361726', 'wikidata': 'https://www.wikidata.org/wiki/Q5527031', 'display_name': 'Gate oxide', 'level': 4, 'score': 0.72880274}, {'id': 'https://openalex.org/C120398109', 'wikidata': 'https://www.wikidata.org/wiki/Q175751', 'display_name': 'Quantum tunnelling', 'level': 2, 'score': 0.63452405}, {'id': 'https://openalex.org/C166972891', 'wikidata': 'https://www.wikidata.org/wiki/Q5527011', 'display_name': 'Gate dielectric', 'level': 4, 'score': 0.58921045}, {'id': 'https://openalex.org/C2779851234', 'wikidata': 'https://www.wikidata.org/wiki/Q50690', 'display_name': 'Oxide', 'level': 2, 'score': 0.5860984}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.58528817}, {'id': 'https://openalex.org/C25356406', 'wikidata': 'https://www.wikidata.org/wiki/Q7226935', 'display_name': 'Polysilicon depletion effect', 'level': 5, 'score': 0.5720746}, {'id': 'https://openalex.org/C52780932', 'wikidata': 'https://www.wikidata.org/wiki/Q994752', 'display_name': 'Equivalent oxide thickness', 'level': 5, 'score': 0.54330415}, {'id': 'https://openalex.org/C28855332', 'wikidata': 'https://www.wikidata.org/wiki/Q198099', 'display_name': 'Quantization (signal processing)', 'level': 2, 'score': 0.48187694}, {'id': 'https://openalex.org/C133386390', 'wikidata': 'https://www.wikidata.org/wiki/Q184996', 'display_name': 'Dielectric', 'level': 2, 'score': 0.47948012}, {'id': 'https://openalex.org/C2777042071', 'wikidata': 'https://www.wikidata.org/wiki/Q6509304', 'display_name': 'Leakage (economics)', 'level': 2, 'score': 0.43732733}, {'id': 'https://openalex.org/C86642149', 'wikidata': 'https://www.wikidata.org/wiki/Q7390375', 'display_name': 'SILC', 'level': 3, 'score': 0.41089386}, {'id': 'https://openalex.org/C119599485', 'wikidata': 'https://www.wikidata.org/wiki/Q43035', 'display_name': 'Electrical engineering', 'level': 1, 'score': 0.32386464}, {'id': 'https://openalex.org/C165801399', 'wikidata': 'https://www.wikidata.org/wiki/Q25428', 'display_name': 'Voltage', 'level': 2, 'score': 0.32251537}, {'id': 'https://openalex.org/C172385210', 'wikidata': 'https://www.wikidata.org/wiki/Q5339', 'display_name': 'Transistor', 'level': 3, 'score': 0.09239012}, {'id': 'https://openalex.org/C41008148', 'wikidata': 'https://www.wikidata.org/wiki/Q21198', 'display_name': 'Computer science', 'level': 0, 'score': 0.077474415}, {'id': 'https://openalex.org/C162324750', 'wikidata': 'https://www.wikidata.org/wiki/Q8134', 'display_name': 'Economics', 'level': 0, 'score': 0.0}, {'id': 'https://openalex.org/C191897082', 'wikidata': 'https://www.wikidata.org/wiki/Q11467', 'display_name': 'Metallurgy', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C31972630', 'wikidata': 'https://www.wikidata.org/wiki/Q844240', 'display_name': 'Computer vision', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C139719470', 'wikidata': 'https://www.wikidata.org/wiki/Q39680', 'display_name': 'Macroeconomics', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': False, 'landing_page_url': 'https://doi.org/10.1557/proc-567-275', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S2530005873', 'display_name': 'MRS Proceedings', 'issn_l': '0272-9172', 'issn': ['0272-9172', '1946-4274'], 'is_oa': False, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310311721', 'host_organization_name': 'Cambridge University Press', 'host_organization_lineage': ['https://openalex.org/P4310311721', 'https://openalex.org/P4310311702'], 'host_organization_lineage_names': ['Cambridge University Press', 'University of Cambridge'], 'type': 'journal'}, 'license': None, 'license_id': None, 'version': None, 'is_accepted': False, 'is_published': False}], 'best_oa_location': None, 'sustainable_development_goals': [], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 6, 'referenced_works': ['https://openalex.org/W2017314863', 'https://openalex.org/W2050445944', 'https://openalex.org/W2138939735', 'https://openalex.org/W2145633302', 'https://openalex.org/W2168723454', 'https://openalex.org/W3213435136'], 'related_works': ['https://openalex.org/W2543315228', 'https://openalex.org/W2144907147', 'https://openalex.org/W2074099177', 'https://openalex.org/W2072955102', 'https://openalex.org/W2044576152', 'https://openalex.org/W2031401740', 'https://openalex.org/W1978403223', 'https://openalex.org/W1974152047', 'https://openalex.org/W1966895782', 'https://openalex.org/W1954343641'], 'abstract_inverted_index': None, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W1966895782', 'counts_by_year': [{'year': 2015, 'cited_by_count': 1}], 'updated_date': '2024-09-26T18:16:54.841118', 'created_date': '2016-06-24'}