Publication Information

{'id': 'https://openalex.org/W1582333278', 'doi': 'https://doi.org/10.7498/aps.55.3003', 'title': 'Substrate and process dependence of gate oxide reliability of 0.18μm dual gate CMOS process', 'display_name': 'Substrate and process dependence of gate oxide reliability of 0.18μm dual gate CMOS process', 'publication_year': 2006, 'publication_date': '2006-01-01', 'ids': {'openalex': 'https://openalex.org/W1582333278', 'doi': 'https://doi.org/10.7498/aps.55.3003', 'mag': '1582333278'}, 'language': 'en', 'primary_location': {'is_oa': True, 'landing_page_url': 'https://doi.org/10.7498/aps.55.3003', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S950076683', 'display_name': 'Acta Physica Sinica', 'issn_l': '1000-3290', 'issn': ['1000-3290'], 'is_oa': True, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310319982', 'host_organization_name': 'Science Press', 'host_organization_lineage': ['https://openalex.org/P4310319982'], 'host_organization_lineage_names': ['Science Press'], 'type': 'journal'}, 'license': 'cc-by', 'license_id': 'https://openalex.org/licenses/cc-by', 'version': 'publishedVersion', 'is_accepted': True, 'is_published': True}, 'type': 'article', 'type_crossref': 'journal-article', 'indexed_in': ['crossref'], 'open_access': {'is_oa': True, 'oa_status': 'hybrid', 'oa_url': 'https://doi.org/10.7498/aps.55.3003', 'any_repository_has_fulltext': False}, 'authorships': [{'author_position': 'first', 'author': {'id': 'https://openalex.org/A5103791280', 'display_name': 'Yi Zhao', 'orcid': None}, 'institutions': [], 'countries': [], 'is_corresponding': False, 'raw_author_name': 'None Zhao Yi', 'raw_affiliation_strings': [], 'affiliations': []}, {'author_position': 'last', 'author': {'id': 'https://openalex.org/A5074380598', 'display_name': 'Wan Xing-Gong', 'orcid': None}, 'institutions': [], 'countries': [], 'is_corresponding': False, 'raw_author_name': 'None Wan  Xing-Gong', 'raw_affiliation_strings': [], 'affiliations': []}], 'institution_assertions': [], 'countries_distinct_count': 0, 'institutions_distinct_count': 0, 'corresponding_author_ids': [], 'corresponding_institution_ids': [], 'apc_list': None, 'apc_paid': None, 'fwci': 0.0, 'has_fulltext': False, 'cited_by_count': 2, 'citation_normalized_percentile': {'value': 0.590643, 'is_in_top_1_percent': False, 'is_in_top_10_percent': False}, 'cited_by_percentile_year': {'min': 68, 'max': 72}, 'biblio': {'volume': '55', 'issue': '6', 'first_page': '3003', 'last_page': '3003'}, 'is_retracted': False, 'is_paratext': False, 'primary_topic': {'id': 'https://openalex.org/T10472', 'display_name': 'Atomic Layer Deposition Technology', 'score': 0.9947, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, 'topics': [{'id': 'https://openalex.org/T10472', 'display_name': 'Atomic Layer Deposition Technology', 'score': 0.9947, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T10558', 'display_name': 'Nanoelectronics and Transistors', 'score': 0.9768, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}, {'id': 'https://openalex.org/T14117', 'display_name': 'Failure Analysis of Integrated Circuits', 'score': 0.9649, 'subfield': {'id': 'https://openalex.org/subfields/2208', 'display_name': 'Electrical and Electronic Engineering'}, 'field': {'id': 'https://openalex.org/fields/22', 'display_name': 'Engineering'}, 'domain': {'id': 'https://openalex.org/domains/3', 'display_name': 'Physical Sciences'}}], 'keywords': [{'id': 'https://openalex.org/keywords/equivalent-oxide-thickness', 'display_name': 'Equivalent oxide thickness', 'score': 0.5288963}, {'id': 'https://openalex.org/keywords/double-gate-transistors', 'display_name': 'Double-Gate Transistors', 'score': 0.528164}, {'id': 'https://openalex.org/keywords/gate-oxides', 'display_name': 'Gate Oxides', 'score': 0.526117}, {'id': 'https://openalex.org/keywords/cmos-scaling', 'display_name': 'CMOS Scaling', 'score': 0.512465}, {'id': 'https://openalex.org/keywords/metal-gate-transistors', 'display_name': 'Metal Gate Transistors', 'score': 0.503424}, {'id': 'https://openalex.org/keywords/metal-gate', 'display_name': 'Metal gate', 'score': 0.46583453}], 'concepts': [{'id': 'https://openalex.org/C152909973', 'wikidata': 'https://www.wikidata.org/wiki/Q7804816', 'display_name': 'Time-dependent gate oxide breakdown', 'level': 5, 'score': 0.8835082}, {'id': 'https://openalex.org/C2361726', 'wikidata': 'https://www.wikidata.org/wiki/Q5527031', 'display_name': 'Gate oxide', 'level': 4, 'score': 0.8424089}, {'id': 'https://openalex.org/C192562407', 'wikidata': 'https://www.wikidata.org/wiki/Q228736', 'display_name': 'Materials science', 'level': 0, 'score': 0.7619229}, {'id': 'https://openalex.org/C2779851234', 'wikidata': 'https://www.wikidata.org/wiki/Q50690', 'display_name': 'Oxide', 'level': 2, 'score': 0.72989726}, {'id': 'https://openalex.org/C2777289219', 'wikidata': 'https://www.wikidata.org/wiki/Q7632154', 'display_name': 'Substrate (aquarium)', 'level': 2, 'score': 0.6592445}, {'id': 'https://openalex.org/C49040817', 'wikidata': 'https://www.wikidata.org/wiki/Q193091', 'display_name': 'Optoelectronics', 'level': 1, 'score': 0.59663993}, {'id': 'https://openalex.org/C46362747', 'wikidata': 'https://www.wikidata.org/wiki/Q173431', 'display_name': 'CMOS', 'level': 2, 'score': 0.57282543}, {'id': 'https://openalex.org/C119321828', 'wikidata': 'https://www.wikidata.org/wiki/Q1267190', 'display_name': 'Breakdown voltage', 'level': 3, 'score': 0.5342236}, {'id': 'https://openalex.org/C52780932', 'wikidata': 'https://www.wikidata.org/wiki/Q994752', 'display_name': 'Equivalent oxide thickness', 'level': 5, 'score': 0.5288963}, {'id': 'https://openalex.org/C51140833', 'wikidata': 'https://www.wikidata.org/wiki/Q6822740', 'display_name': 'Metal gate', 'level': 5, 'score': 0.46583453}, {'id': 'https://openalex.org/C165801399', 'wikidata': 'https://www.wikidata.org/wiki/Q25428', 'display_name': 'Voltage', 'level': 2, 'score': 0.3716935}, {'id': 'https://openalex.org/C119599485', 'wikidata': 'https://www.wikidata.org/wiki/Q43035', 'display_name': 'Electrical engineering', 'level': 1, 'score': 0.2922143}, {'id': 'https://openalex.org/C172385210', 'wikidata': 'https://www.wikidata.org/wiki/Q5339', 'display_name': 'Transistor', 'level': 3, 'score': 0.1545592}, {'id': 'https://openalex.org/C191897082', 'wikidata': 'https://www.wikidata.org/wiki/Q11467', 'display_name': 'Metallurgy', 'level': 1, 'score': 0.058338672}, {'id': 'https://openalex.org/C111368507', 'wikidata': 'https://www.wikidata.org/wiki/Q43518', 'display_name': 'Oceanography', 'level': 1, 'score': 0.0}, {'id': 'https://openalex.org/C127313418', 'wikidata': 'https://www.wikidata.org/wiki/Q1069', 'display_name': 'Geology', 'level': 0, 'score': 0.0}, {'id': 'https://openalex.org/C127413603', 'wikidata': 'https://www.wikidata.org/wiki/Q11023', 'display_name': 'Engineering', 'level': 0, 'score': 0.0}], 'mesh': [], 'locations_count': 1, 'locations': [{'is_oa': True, 'landing_page_url': 'https://doi.org/10.7498/aps.55.3003', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S950076683', 'display_name': 'Acta Physica Sinica', 'issn_l': '1000-3290', 'issn': ['1000-3290'], 'is_oa': True, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310319982', 'host_organization_name': 'Science Press', 'host_organization_lineage': ['https://openalex.org/P4310319982'], 'host_organization_lineage_names': ['Science Press'], 'type': 'journal'}, 'license': 'cc-by', 'license_id': 'https://openalex.org/licenses/cc-by', 'version': 'publishedVersion', 'is_accepted': True, 'is_published': True}], 'best_oa_location': {'is_oa': True, 'landing_page_url': 'https://doi.org/10.7498/aps.55.3003', 'pdf_url': None, 'source': {'id': 'https://openalex.org/S950076683', 'display_name': 'Acta Physica Sinica', 'issn_l': '1000-3290', 'issn': ['1000-3290'], 'is_oa': True, 'is_in_doaj': False, 'is_core': True, 'host_organization': 'https://openalex.org/P4310319982', 'host_organization_name': 'Science Press', 'host_organization_lineage': ['https://openalex.org/P4310319982'], 'host_organization_lineage_names': ['Science Press'], 'type': 'journal'}, 'license': 'cc-by', 'license_id': 'https://openalex.org/licenses/cc-by', 'version': 'publishedVersion', 'is_accepted': True, 'is_published': True}, 'sustainable_development_goals': [], 'grants': [], 'datasets': [], 'versions': [], 'referenced_works_count': 0, 'referenced_works': [], 'related_works': ['https://openalex.org/W803248027', 'https://openalex.org/W2537324489', 'https://openalex.org/W2363136417', 'https://openalex.org/W2361669760', 'https://openalex.org/W2102648694', 'https://openalex.org/W2073644107', 'https://openalex.org/W2023353733', 'https://openalex.org/W1984109273', 'https://openalex.org/W1966895782', 'https://openalex.org/W1964443114'], 'abstract_inverted_index': {'V-ramp': [0], 'method': [1], 'was': [2, 36, 162], 'used': [3], 'to': [4, 117, 120], 'evaluate': [5], 'gate': [6, 12, 25, 44, 50, 68, 89, 98, 108, 112, 125, 128, 160], 'oxide': [7, 26, 45, 51, 69, 90, 99, 109, 113, 145, 161, 181], 'reliability': [8], 'of': [9, 16, 21, 24, 49, 52, 73, 88, 97, 104, 106, 123, 139, 141, 143, 152, 175, 177, 179], '0.18μm': [10], 'dual': [11], 'CMOS': [13], 'process.': [14], 'Charge': [15], 'breakdown': [17, 22, 142, 178], '(Qbd)': [18], 'and': [19, 30, 55, 76, 110, 126, 146, 158, 182], 'voltage': [20, 41, 65, 151, 176], '(Vbd)': [23], 'with': [27, 91, 100], 'n-type': [28, 53, 74], 'substrate': [29, 32, 54, 57, 75, 78], 'p-type': [31, 56, 77], 'were': [33], 'extracted.': [34], 'It': [35], 'found': [37], 'that': [38, 96], 'for': [39, 63], 'low': [40], '(thin': [42], 'oxide)': [43, 67], 'device': [46, 70], 'the': [47, 60, 71, 84, 121, 136, 150, 172], 'Qbd': [48, 72, 87, 105], 'are': [58], 'almost': [59], 'same,': [61], 'but': [62], 'high': [64], '(thick': [66], 'have': [79], 'a': [80, 132], 'big': [81, 133, 169], 'difference.': [82], 'At': [83], 'same': [85], 'time,': [86], 'p-substrate': [92, 159], 'is': [93, 131, 167], 'bigger': [94], 'than': [95], 'n-substrate.': [101], 'The': [102], 'difference': [103, 134, 155, 170], 'thin': [107, 144, 180], 'thick': [111, 127, 147, 183], 'can': [114], 'be': [115], 'attributed': [116], 'lithographic': [118], 'damage': [119], 'interface': [122], 'poly-silicon': [124], 'oxide.': [129, 148, 184], 'There': [130], 'between': [135, 156, 171], 'Weibull': [137, 173], 'slopes': [138, 174], 'charge': [140], 'For': [149], 'breakdown,': [153], 'Similar': [154], 'n-substrate': [157], 'also': [163], 'observed.': [164], 'However,': [165], 'there': [166], 'no': [168]}, 'cited_by_api_url': 'https://api.openalex.org/works?filter=cites:W1582333278', 'counts_by_year': [{'year': 2019, 'cited_by_count': 1}, {'year': 2015, 'cited_by_count': 1}], 'updated_date': '2024-09-24T21:00:38.533788', 'created_date': '2016-06-24'}